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MIL-PRF-19500-415 Semiconductor, Device, Transistor, Npn, Silicon, High-Power Types 2N2812 And 2N2814 Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN, silicon, high-power transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/415A
* 4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in
accordance with table I, subgroup 2. Delta measurements shall be in accordance with table II herein.
Subgroup
Method
Condition
C2
2036
Tension, condition A, 10 lbs,10 sec.
C2
2036
Stud torque condition D, torque = 20 in-lbs, time = 15 sec.
VCB ≥ 10 V dc, 6,000 cycles.
C6
1037
4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table IX of MIL-PRF-19500 and as specified herein. Electrical measurements (end-
points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with
table II herein.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
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