INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
MIL-PRF-19500/434E
shall be completed by 13 December 2011.
13 September 2011
SUPERSEDING
MIL-PRF-19500/434D
18 May 2009
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR,
TYPES 1N5610 THROUGH 1N5613, JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 1,500 watt, peak, pulse power, silicon,
transient, voltage suppressor diodes. Four levels of product assurance are provided for each device as specified in
1.2 Physical dimensions. See figure 1 (axial).
1.3 Maximum ratings. Maximum ratings are as shown in columns 5 through 8 of the characteristics and ratings
table herein, and as follows:
PM(AV) = 3.0 W (derate at 20 mW/°C above TA = +25°C) (see figure 2).
a.
PPP = 1,500 W (see figure 3) at tp = 1.0 ms.
b.
IFSM = 150 A (pk) at tp = 8.33 ms (TA = +25°C).
c.
-55°C ≤ TJ ≤ +175°C (ambient), -55°C ≤ TSTG ≤ +175°C (ambient).
d.
1.4 Primary electrical characteristics at TA = +25°C. Primary electrical characteristics are shown in columns 2
and 4 of the characteristics and ratings table herein.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since
contact information can change, you may want to verify the currency of this address information using the
ASSIST Online database at https://assist.daps.dla.mil/.
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