MIL-PRF-19500-434 Semiconductor Device, Diode, Silicon, Transient Voltage Suppressor, Type 1N5610 Through 1N5613, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for 1,500 watt, peak, pulse power, silicon, transient, voltage suppressor diodes. Four levels of product assurance are provided for each device as specified in MIL-PRF-19500.

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MIL-PRF-19500/434E

* TABLE IV. Group E inspection.

Inspection

Sampling plan

Method

Conditions

Subgroup 1

45 devices

c=0

500 cycles, condition C, -55�C to +175�C.

Temperature cycling

1051

Electrical measurements

See table III. Steps 1, 2, 3, 4, and 5.

Subgroup 2

22 devices

c=0

1,000 hours. See 4.5.1.

Life test

Electrical measurements

See table III, Steps 1, 2, 3, 4, and 5.

Subgroup 4

Not applicable

Subgroup 5

Not applicable

Subgroup 6

See 4.5.2. IPP shall be characterized by the supplier

Peak pulse current

and this data shall be available to the government.

Test shall be performed on each low and high voltage

device for each structurally identical grouping. Test to

failure.

Electrical measurements

See table III, steps 1, 2, 3, 4, and 5.

Subgroup 7

3 devices,

c=0

Soldering heat

2031