MIL-PRF-19500-434 Semiconductor Device, Diode, Silicon, Transient Voltage Suppressor, Type 1N5610 Through 1N5613, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for 1,500 watt, peak, pulse power, silicon, transient, voltage suppressor diodes. Four levels of product assurance are provided for each device as specified in MIL-PRF-19500.

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MIL-PRF-19500/434E

4.5.2 Accelerated steady-state operation life (JANS). This test shall be conducted with the devices subjected to

the breakdown current specified in column 10 of table III for a total duration of 96 hours. At the beginning and end

(with devices cooled to TA = +25�C) of the test, the devices shall be subjected to pulse conditions at the rate of one

pulse per minute (max) for 10 pulses in accordance with 4.5.3 as specified.

4.5.3 Maximum peak pulse current (Ipp). The peak pulse currents specified in column 7 of table III shall be

applied in the reverse direction while simultaneously maintaining a reverse bias voltage of not less than the

applicable voltage specified in column 4 of table III. The peak current shall be applied with a current VS time

waveform as follows (1 pulse per minute maximum):

a. Pulse current shall reach 100 percent of IPP at t ≤ 8 �s and decay to 50 percent of IPP at t ≥

20 �s for tp = 20 �s, (see figure 4).

b. Pulse current shall reach 100 percent of IPP at t ≤ 10 �s and decay to 50 percent of IPP at t ≥

1 ms for tp = 1 ms (see figure 5).

NOTE: Tolerance on time (t) shall be -0, +10 percent.

4.5.4 Clamping voltage. The peak pulse clamping voltage shall be measured across the diode in a 1 ms time

interval. The response detector shall demonstrate equipment accuracy of �3 percent.