MIL-PRF-19500-434 Semiconductor Device, Diode, Silicon, Transient Voltage Suppressor, Type 1N5610 Through 1N5613, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for 1,500 watt, peak, pulse power, silicon, transient, voltage suppressor diodes. Four levels of product assurance are provided for each device as specified in MIL-PRF-19500.

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MIL-PRF-19500/434E

4.4.2.2 Group B inspection, table E-VIB (JAN, JANTX, and JANTXV of MIL-PRF-19500. Subgroup 3: Condition

for steady-state operation life are as follows: See 4.5.1, 1 ms pulse only (see 4.5.3.b).

4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) and delta requirements

shall be in accordance with the applicable steps of table II herein.

4.4.3.1 Group C inspection, table E-VII of MIL-PRF-19500.

a. Subgroup 2: The conditions for terminal strength are as follows: Lead tension: Test condition A;

weight = 5 pounds; t = 15 �3 s.

Lead fatigue: Test condition E; weight = 8 ounces.

b. Subgroup 6: The condition for steady-state operation life is as follows: See 4.5.1, 1 ms pulse only (see

c. Subgroup 8: The conditions for temperature coefficient of breakdown voltage are as follows: I(BR) =

column 3 of table III, T1 = +25�C �3�C, T2 = T1 +100�C, sample size n = 22, c = 0.

d. Subgroup 8: The conditions for maximum peak pulse current are as follows: See 4.5.3.a (20 �s pulse only)

ten pulses, sample size n = 22, c = 0.

* 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup testing in appendix E, table E-IX of MIL-PRF-19500 and as specified in table IV herein. Electrical

measurements (end-points) shall be in accordance with table I, subgroup 2 herein.

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows.

4.5.1 Power burn-in (HTRB) and steady-state operation life test conditions. The test conditions and order of

events shall be as follows:

a. Pulse in accordance with 4.5.3.b, 20 times (screening and group B) and 100 times (group C) at TA = +25�C.

b. Read ID and V(BR) at TA = +25�C, remove defective devices and record the number of failures.

c. Apply the working peak reverse voltage (VWM) (column 4 of table III) at TA = +125�C as follows:

(1) For 96 hours (JANTX and JANTXV) and 240 hours (JANS) for the screening test.

(2) For 340 hours (JANTX, and JANTXV) for group B steady-state operation life test.

(3) For 1,000 hours for group C steady-state operation life test.

d. Read and record ID and V(BR) at TA = +25�C. Devices with ĆID > 50 percent (100 percent for steady-state

operation life) of the initial reading or 1 �A dc, whichever is greater, or ĆV(BR) > �2 percent (�5 percent for

steady-state operation life) initial value shall be considered defective. Remove defective devices and record

the number of failures.

4.5.1.1 Group C steady-state operation life test (alternate procedure). When the group B 340 hour life test is

continued on test to 1,000 hours to satisfy the group C life test requirements, the test shall be performed as given in

4.5.1 herein with the following exceptions:

a. See 4.5.1 herein, step b shall be moved and performed following step e.

b. See 4.5.1 herein, step e shall be repeated after step b is performed.