MIL-PRF-19500-434 Semiconductor Device, Diode, Silicon, Transient Voltage Suppressor, Type 1N5610 Through 1N5613, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for 1,500 watt, peak, pulse power, silicon, transient, voltage suppressor diodes. Four levels of product assurance are provided for each device as specified in MIL-PRF-19500.

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MIL-PRF-19500/434E

Dimensions

Ltr

Notes

Inches

Millimeters

Min

Max

Min

Max

.150

.185

3.81

4.70

.160

.375

4.06

9.53

schematic symbol

.037

.042

0.94

1.07

.900

1.300 22.86 33.02

.050

1.27

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Package contour optional within BD and length BL.

4. Within this zone lead diameter may vary to allow for lead finishes and irregularities other than heat slugs.

5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.

* FIGURE 1. Physical dimensions, type 1N5610 through 1N5613.