MIL-PRF-19500-435 Semiconductor Device, Diode, Silicon, Low-Noise Voltage Regulator, Types 1N4099-1 Through 1N4135-1, 1N4614-1 Through 1N4627-1, 1N4099Ur-1 Through 1N4135Ur-1, 1N4614Ur-1 Through 1N4627Ur-1, \(Ub, Ub2, Ub2R, Ubca, Ubd, And Ubcc\), C And D Tolerance Suffix Devices, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type \(die\). For JANHC and JANKC quality levels see 6.5.

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MIL-PRF-19500/435M

NOTES:

1. Input voltage and lead resistance should be high so that zener can be driven from a constant current source.

2. Input impedance of band pass filter should be high compared with the dynamic impedance of the diode under

test.

3. Filter bandwidth characteristics shall be as follows:

a. fo = 2,000 Hz.

b. Shape factor, -40 db to -3 dB, approximately 2.

c. Passband at the -3 dB is 1,000 Hz ≤50 Hz to 3,000 Hz ≤150 Hz.

d. Passband at the -40 dB is 500 Hz ≤50 Hz to 6,000 Hz ≤600 Hz.

FIGURE 6. Circuit for determination of noise density.