MIL-PRF-19500-435 Semiconductor Device, Diode, Silicon, Low-Noise Voltage Regulator, Types 1N4099-1 Through 1N4135-1, 1N4614-1 Through 1N4627-1, 1N4099Ur-1 Through 1N4135Ur-1, 1N4614Ur-1 Through 1N4627Ur-1, \(Ub, Ub2, Ub2R, Ubca, Ubd, And Ubcc\), C And D Tolerance Suffix Devices, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type \(die\). For JANHC and JANKC quality levels see 6.5.

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MIL-PRF-19500/435M

TABLE II. Group E inspection (all quality levels) � for qualification and requalification only.

Inspection 1/

Qualification conformance

inspection (sampling plan)

Method

Conditions

45 devices, c = 0

Subgroup 1

Temperature cycling

1051

500 cycles.

See table I, subgroup 2.

Electrical measurements

45 devices, c = 0

Subgroup 2

6,000 cycles. IZ = column 10 of table III.

Intermittent life

1037

Electrical measurements

See table I, subgroup 2.

Subgroup 4

Thermal resistance

3131

15 devices,

RθJSP(IS) can be calculated but shall be

c=0

measured once in the same package with a

similar die size to confirm calculations (may

apply to multiple specification sheets)

RθJSP(AM) need be calculated only

Thermal impedance curves

N/A

Subgroups 5 and 6

Not applicable

Subgroup 9

n = 45

Resistance to glass

1057

Condition B. Cool down after solder

cracking

immersion is permitted. Test until failure

occurs on all devices or to a maximum of 25

cycles, whichever comes first. Not applicable

for UB and UB2 devices.

1/ A separate sample may be pulled for each test.