MIL-PRF-19500-435 Semiconductor Device, Diode, Silicon, Low-Noise Voltage Regulator, Types 1N4099-1 Through 1N4135-1, 1N4614-1 Through 1N4627-1, 1N4099Ur-1 Through 1N4135Ur-1, 1N4614Ur-1 Through 1N4627Ur-1, \(Ub, Ub2, Ub2R, Ubca, Ubd, And Ubcc\), C And D Tolerance Suffix Devices, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type \(die\). For JANHC and JANKC quality levels see 6.5.

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MIL-PRF-19500/435M

* 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for

subgroup testing in appendix E, table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points)

requirements shall be in accordance with table I, subgroup 2 herein.

Subgroup

Method

Condition

0�C to +100�C, 10 cycles.

1056

2036

Tension: condition A; 10 pounds; t = 15 seconds (not applicable to "UR" suffix

devices). Lead fatigue: Condition E, (not applicable to "UR" suffix devices).

1071

Test condition E.

Not applicable.

See 4.3.2, RθJL and RθJEC only.

4081

IZM = column 10 of table III minimum. Adjust IZ or TA to ensure a TJ = +150�C

1027

(min).

IZ = 250 �A dc, TA = +25�C � 5�C, T2 = +125�C, αVZ = column 8 of table III,

4071

sampling plan = 22 devices, c = 0.

4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup testing in appendix E, table E-IX of MIL-PRF-19500 and in table II herein. Electrical measurements (end-

points) requirements shall be in accordance with table I, subgroup 2 herein.

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows:

4.5.1 Surge current (IZSM). The peak currents shown in column 5 of table III shall be applied in the reverse

direction and these shall be superimposed on the current (IZ = 250 �A dc) a total of five surges at 1 minute intervals.

Each individual surge shall be one-half square-wave-pulse of 1/120 second duration or an equivalent one-half

sinewave with the same effective rms current.

4.5.2 Regulator voltage measurements. The test current shall be applied until thermal equilibrium is attained (20

�2 seconds maximum) prior to reading the breakdown voltage. For this test, the diode shall be suspended by its

leads with mounting clips whose inside edge is located at .375 inch (9.53 mm) from the body and the mounting clips

shall be maintained at a temperature of +25�C +8�C, -2�C. This measurement may be performed after a shorter time

following application of the test current than that which provides thermal equilibrium if correlation to stabilized

readings can be established to the satisfaction of the qualifying activity. The breakdown voltage on JANHC and

JANKC shall be read with a pulse measurement of 10 ms (max).

4.5.3 Temperature coefficient of regulator voltage (αVZ). The device shall be temperature stabilized with current

applied prior to reading regulator voltage at the specified ambient temperature as specified in table I herein,

subgroup 7.

4.5.4 Free air burn-in and life tests. The use of a current limiting or ballast resistor is permitted provided that each

DUT still sees the full Pt (minimum) and that the minimum applied voltage, where applicable, is maintained through-

out the burn-in period. Use method 3100 of MIL-STD-750 to measure TJ.