MIL-PRF-19500-435 Semiconductor Device, Diode, Silicon, Low-Noise Voltage Regulator, Types 1N4099-1 Through 1N4135-1, 1N4614-1 Through 1N4627-1, 1N4099Ur-1 Through 1N4135Ur-1, 1N4614Ur-1 Through 1N4627Ur-1, \(Ub, Ub2, Ub2R, Ubca, Ubd, And Ubcc\), C And D Tolerance Suffix Devices, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type \(die\). For JANHC and JANKC quality levels see 6.5.

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MIL-PRF-19500/435M

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)

before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500 and as follows:

2 percent voltage tolerance.

1 percent voltage tolerance.

TEC

Temperature of end-cap.

* 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in

MIL-PRF-19500 and on figures 1, 2, 3, 4, and 5 herein.

3.4.1 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and herein. Where

a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).

3.4.2 Diode construction. All devices shall be in accordance with the requirements of MIL-PRF-19500.

3.4.3 Dash one construction. Dash one (-1) diodes shall be of metallurgically bonded double plug construction or

straight through construction in accordance with the requirements of category I, II, or III (see MIL-PRF-19500).

3.4.4 JANS construction. Construction shall be dash one or straight through construction, category I or II

metallurgical bond in accordance with MIL-PRF-19500.

3.4.5 Package outline. This specification contains one standard package; DO-35. Any user of this specification

that has a specific package outline requirement shall specify their preference in the acquisition order. If package style

is not specified, the manufacturer may supply either package. Surface mount devices are in a DO-213AA package.

3.5 Marking. Marking shall be in accordance with MIL-PRF-19500 and as specified herein.

3.5.1 Polarity. The polarity shall be indicated with a contrasting color band to denote the cathode end. Alternately,

for surface mount (UR) devices, a minimum of three evenly spaced contrasting color dots around the periphery of the

cathode end may be used. No color coding will be permitted.

3.5.2 Marking of UR suffix version devices. For UR suffix (surface mount) devices only, all marking (except

polarity) may be omitted from the body of the device, but shall be retained on the initial container.

3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I herein.

3.6.1 Selection of tight tolerance devices. The C and D suffix devices shall be selected from JAN, JANTX,

JANTXV, or JANS devices which have successfully completed all applicable screening, table I, and groups B and C

testing as 5 percent tolerance devices. All sublots of C and D suffix devices shall pass table I, subgroup 2 at the

tightened tolerances. The PTL or PTEC for C and D suffix devices shall be maintained at 30�C �2�C for VZ

correlation on tight tolerances.