MIL-PRF-19500-435 Semiconductor Device, Diode, Silicon, Low-Noise Voltage Regulator, Types 1N4099-1 Through 1N4135-1, 1N4614-1 Through 1N4627-1, 1N4099Ur-1 Through 1N4135Ur-1, 1N4614Ur-1 Through 1N4627Ur-1, \(Ub, Ub2, Ub2R, Ubca, Ubd, And Ubcc\), C And D Tolerance Suffix Devices, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type \(die\). For JANHC and JANKC quality levels see 6.5.

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MIL-PRF-19500/435M

4.5.5 Noise density. Noise density shall be measured using a noise density test circuit as shown on figure 6.

Place a low-noise resistor, equivalent in value to the dynamic impedance of the diode under test, in the test clips and

adjust test current (IZT) and measure output-noise voltage. Remove resistor, insert diode under test in test clips,

readjust test current to 250 �A dc and measure output-noise voltage again. To obtain noise density (ND), subtract

rms resistor output-noise voltage from rms diode output-noise voltage and divide by product of overall system gain

and square root of bandwidth. All measurements shall be made at +25�C.

4.5.6 Decap internal visual scribe and break. Scratch glass at cavity area with diamond scribe. Carefully snap

open. Using 30X magnification examine the area where die (or bonding material) are in contact with the plugs, verify

metallurgical bonding area. If the verification of the metallurgical bonding area is in question with test method 3101 of

MIL-STD-750, and test condition and limits herein, (ZΘJX) shall be used to determine suitability for use.