The documentation and process conversion measures
INCH-POUND
necessary to comply with this document shall be
completed by 30 April 2014.
MIL-PRF-19500/439H
30 January 2014
SUPERSEDING
MIL-PRF-19500/439G
17 February 2012
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER,
TYPES 2N5038 AND 2N5039, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1.1 Scope. This specification covers the performance requirements for NPN silicon, high-power transistors for use in
high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device
type as specified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device
type.
1.3 Maximum ratings. TA = +25°C (unless otherwise specified).
PT (1) at
VCBO
VCEO
VEBO
IB
IC
TJ and TSTG
TC = +25°C
°C
W
V dc
V dc
V dc
A dc
V dc
2N5038
140
90
7.0
5
20
-65 to +200
150
2N5039
140
75
7.0
5
20
-65 to +200
125
1.4 Primary electrical characteristics at TA = +25°C.
hfe
hFE3
VCE(sat)1 (1)
Cobo
RΘJC
Limit
(1)
IC = 12 A dc
Pulse
VCB = 10 V dc
VCE = 5.0 V dc
VCE = 10 Vdc
IB = 1.2 A dc
(2)
Response
IC = 12 A dc
(2N5038)
(2N5038)
IE = 0
IC = 2.0 A dc
IC = 10 A dc
100 kHz ≤ f ≤ 1MHz
IC = 10 A dc
IB = 1.0 A dc
(2N5039)
f = 5 MHz
(2N5039)
ton
toff
µs
µs
°C/W
V dc
pF
Min
15
12
Max
48
1.0
500
0.5
2.0
1.25
(1) Pulsed (see 4.5.1).
(2) See figure 4 for thermal impedance curve.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.dla.mil .
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