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MIL-PRF-19500-439 Semiconductor Device, Transistor, Npn, Silicon, High-Power, Types 2N5038 And 2N5039, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for NPN silicon, high-power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/439H
* TABLE I. Group A inspection - Continued.
MIL-STD-750
Limits
Inspection 1/
Symbol
Unit
Method
Conditions
Min
Max
Subgroup 4 - Continued
3251
Test condition A except test
Pulse response
circuit and pulse requirements
transfer ratio
in accordance with figure 6 herein.
VCC = 30 V dc
Turn on time
ton
µs
IC = 12 A dc, IB1 = 1.2 A dc
2N5038
0.5
µs
IC = 10 A dc, IB1 = 1.0 A dc
2N5039
0.5
VCC = 30 V dc
Turn off time
toff
µs
IC = 12 A dc, IB1 = -IB2 = 1.2 A dc
2N5038
2.0
µs
IC = 10 A dc,IB1 = -IB2 = 1 A dc
2.0
2N5039
Subgroup 5
TC = +25°C,
3051
Safe operating area
t = 1 s,
(dc operation)
1 cycle, see figure 7
IC = 5 A dc, VCE = 28 V dc
Test 1
IC = 0.9 A dc, VCE = 45 V dc
Test 2
IC = 20 A dc, VCE = 7.0 V dc
Test 3
IC = 0.23 A dc, VCE = 90 V dc
Test 4
(2N5038 only)
IC = 0.32 A dc, VCE = 75 V dc
Test 5
(2N5039 only)
Condition B, TC = +25°C,
Safe operating area
3053
*
IC = 20 A dc;
(clamped switching)
(see figures 8 and 9)
2N5038
Clamp voltage = 90 V dc
2N5039
Clamp voltage = 75 V dc
(Device fails if clamp voltage is not
reached)
See 4.5.3, steps 1 and 3
Electrical measurements
Subgroup 6 and 7
Not applicable
1/
For sampling plan, see MIL-PRF-19500.
2/
This test required for the following end-point measurements only:
Group B, subgroups 3, 4, and 5 (JANS).
Group B, subgroups 2 and 3 (JAN, JANTX, and JANTXV).
Group C, subgroup 2 and 6.
Group E, subgroup 1.
11



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