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MIL-PRF-19500-439 Semiconductor Device, Transistor, Npn, Silicon, High-Power, Types 2N5038 And 2N5039, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for NPN silicon, high-power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/439H
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TJ = +187.5°C ±12.5°C;
VCB = 60 V dc ±5 V dc; TA ≤ +100°C.
4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method
3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VH where appropriate).
Measurement delay time (tMD) = 70 µs max. See figure 4 and table II, group E, subgroup 4 herein.
* 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I
herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-Via (JANS) and table E-VIB (JANTX, and JANTXV) of MIL-PRF-19500 and as follows.
Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta requirement shall
be in accordance with 4.5.3 herein.
* 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500.
Subgroup
Method
Condition
*
B3
2037
Test condition D.
VCB = 10 V dc; ĆTJ between cycles ≥ = +100°C; Ton = Toff ≥ 1 minute.
*
B4
1037
VCE ≥ 20 V dc; PT = 80 W at TC = +100°C or adjusted as required by the chosen TC to give
B5
1027
an average lot TJ = +225°C.
B6
3131
See 4.5.2.
Load condition C; (unclamped inductive load) (see figure 5); TC = +25°C; duty cycle ≤ 10
B7
3053
percent; Rs = 0.1Ω; tr = tp ≤ 500ns, for qualification and large lot QCI, sample size = 22, c = 0;
for small lot QCI, sample size = 6, c = 0.
TEST 1: tp = 5 ms (vary to obtain IC); RBB1 = 2Ω; VBB1 = 10 V dc minimum;
*
RBB2 = 20Ω; VBB2 = 4 V dc; VCC = 10 V dc; IC = 20 A; L = 70 µH, 0.1Ω.
TEST 2: tp = 5 ms (vary to obtain IC); RBB1 = 40Ω; VBB1 = 10 V dc minimum;
*
RBB2 = 20Ω; VBB2 = 4 V dc; VCC = 10 V dc; IC = 4.5 A; L = 500 µH, 0.1Ω.
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