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MIL-PRF-19500-439 Semiconductor Device, Transistor, Npn, Silicon, High-Power, Types 2N5038 And 2N5039, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for NPN silicon, high-power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/439H
* TABLE I. Group A inspection.
MIL-STD-750
Limits
Inspection 1/
Symbol
Unit
Method
Conditions
Min
Max
Subgroup 1
2071
Visual and mechanical
examination
Subgroup 2
°C/W
ZΘJX
See 4.3.3
3131
Thermal impedance 2/
V(BR)CEO
Bias condition D,
3011
Breakdown voltage,
IC = 200 mA dc,
collector to emitter
pulsed (see 4.5.1)
90
2N5038
V dc
75
2N5039
V dc
Bias condition D
ICEO
Collector-emitter
3041
cutoff current
µA dc
1
µA dc
VCE = 70 V dc
2N5038
1
VCE = 55 V dc
2N5039
µA dc
Bias condition D,
IEBO
Emitter to base
3061
100
VEB = 5.0 V dc
cutoff current
Bias condition A,
ICEX1
Collector-emitter
3041
VBE = -1.5 V dc
cutoff current
µA dc
VCE = 100 V dc
2N5038
5
VCE = 85 V dc
µA dc
2N5039
5
Bias condition D
ICBO
Collector to base
3036
cutoff current
µA dc
VCE = 150 V dc
2N5038
1
VCE = 125 V dc
µA dc
2N5039
1
Bias condition D,
V(BR)EBO
Breakdown voltage,
3026
7.0
V dc
IE = 25 mA dc
emitter to base
Test condition B,
VBE
Base to emitter voltage
3066
VCE = 5 V dc;
(nonsaturated)
pulsed (see 4.5.1)
IC = 12 A dc
2N5038
1.8
V dc
IC = 10 A dc
2N5039
1.8
V dc
Test condition A, IC = 20 A dc;
Base to emitter voltage
3066
3.3
V dc
VBE(sat)
IB = 5 A dc
(saturated)
Pulsed (see 4.5.1)
Collector to emitter
3071
VCE(sat)1
voltage (saturated)
IC = 12 A dc, IB = 1.2 A dc
2N5038
1.0
V dc
IC = 10 A dc, IB = 1.0 A dc
2N5039
1.0
V dc
See footnote at end of table.
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