MIL-PRF-19500-439 Semiconductor Device, Transistor, Npn, Silicon, High-Power, Types 2N5038 And 2N5039, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for NPN silicon, high-power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/439H

3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified

herein.

4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In

case qualification was awarded to a prior revision of the specification sheet that did not require the performance of

table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on

the first inspection lot of this revision to maintain qualification.

4.2.2 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with

4.3 Screening (JANS, JANTXV and JANTX levels). Screening shall be in accordance with table E-IV of MIL-

PRF19500 and as specified herein. The following measurements shall be made in accordance with table I herein.

Devices that exceed the limits of table I herein shall not be acceptable.

Screen

Measurement

(see table E-IV of

JANS

JANTX and JANTXV levels

3c (1)

Thermal impedance (see 4.3.3)

ICEX1, hFE2, and hFE3

ICEX1

ICEX1, hFE2, and hFE3;

ĆICEX1 = 100 percent of initial value or

1 �A dc, whichever is greater;

1 �A dc, whichever is greater.

ĆhFE3 = �20 percent of the initial value.

13 (2)

Subgroup 2 and 3 of table I herein;

Subgroup 2 of table I herein;

ĆICEX1 = 100 percent of initial value or

1 �A dc, whichever is greater;

ĆhFE3 = �20 percent of initial value.

(1)

Shall be performed anytime after temperature cycling, screen 3a. JANTX and JANTXV levels do not need to

be repeated in screening requirements.