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MIL-PRF-19500-448 Semiconductor Device, Transistor, Pnp, Silicon, Low-Power, Type 2N4405, 2N4405Ua, And 2N4405Ub, Jan And JantxThis specification covers the performance requirements for PNP, silicon, low-power transistors. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15

MIL-PRF-19500/448F

TABLE I. Group A inspection - Continued.

Inspection 1/

MIL-STD-750

Symbol

Limits

Unit

Method

Conditions

Min

Max

Subgroup 2 - Continued

Forward-current transfer ratio

3076

100

300

VCE = 5 V dc; IC = 150 mA dc,

hFE3

pulsed (see 4.5.1)

Forward-current transfer ratio

3076

VCE = 5 V dc; IC = 500 mA dc;

hFE4

pulsed (see 4.5.1)

Collector-emitter saturated

3071

0.15

V dc

IC = 10 mA dc; IB = 1.0 mA dc;

VCE(SAT)1

voltage

pulsed (see 4.5.1)

Collector-emitter saturated

3071

0.20

V dc

IC = 150 mA dc; IB = 15 mA dc;

VCE(SAT)2

voltage

pulsed (see 4.5.1)

Collector-emitter saturated

3071

0.50

V dc

IC = 500 mA dc; IB = 50 mA dc;

VCE(SAT)3

voltage

pulsed (see 4.5.1)

Base-emitter non-saturated

3066

Test condition B; VCE = 5 V dc;

0.90

V dc

VBE

IC = 150 mA dc; pulsed (see 4.5.1)

Base-emitter saturated

3066

0.80

V dc

Test condition A; IC = 10 mA dc;

VBE(SAT)1

voltage

IB = 1 mA dc; pulsed (see 4.5.1)

Base-emitter saturated

3066

0.85

1.20

V dc

Test condition A; IC = 500 mA dc;

VBE(SAT)2

voltage

IB = 50 mA dc; pulsed (see 4.5.1)

Subgroup 3

TA = +150�C

High-temperature operation

�A dc

Collector to base cutoff

3036

Bias condition D, VCB = 60 V dc

ICBO3

current

TA = -55�C

Low-temperature operation

Forward-current transfer ratio

3076

VCE = 5 V dc; IC = 150 mA dc

hFE5

pulsed (see 4.5.1)

See footnotes at end of table.