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MIL-PRF-19500-452 Semiconductor Device, Diode, Silicon, Temperature Compensated, Voltage Reference, Types 1N4565A-1 Through 1N4584A-1, And 1N4565Aur-1 Through 1N4584Aur-1, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc, Radiation Hardened \(Total Dose Only\) Types Jantxvm, D, L, R, F, G, H; Jansm, D, L, R, F, G, H, Janhcm, D, L, R, F, G, H; And Jankcm, D, L, R, F, G, HThis specification covers the performance requirements for 6.4 volts ┬▒5 percent, silicon, low bias current, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die. Seven levels of radiation hardened \(total dose only\) product assurance are provided for each encapsulated device type, and two levels of product assurance for each unencapsulated device type die as specified in MIL-PRF-19500.

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MIL-PRF-19500/452J
* 4.3 Screening (JANS, JANTXV and JANTX levels only). Screening shall be in accordance with table E-IV of
MIL-PRF-19500, and as specified herein. Specified electrical measurements shall be made in accordance with table
I herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen
(see table E-IV of
JANS level
JANTXV and JANTX level
MIL-PRF-19500)
1a
Required
Not required
1b
Required
Required (JANTXV only)
2
Not required
Not required
3a
Required
Required
3b
Not applicable
Not applicable
3c
Not applicable
Not applicable
4
Not applicable
Not applicable
5
Not applicable
Not applicable
6
Not applicable
Not applicable
7a
Not applicable
Not applicable
7b
Optional
Optional
8
Required
Not required
9
Required
Not applicable
10
Not applicable
Not applicable
11
Required VZ, ZZ
Required VZ, ZZ
12
Required, see 4.3.1
Required, see 4.3.1
Required
13
Required
Subgroup 2 of table I herein ZZ ±15
Subgroups 2 and 3 of table I herein;
ZZ ±15 percent of initial reading
percent of initial reading.
VZ ±0.005 V dc from initial value at
VZ ±0.005 V dc from initial value
TA = +25C ±2C
at TA = +25C ±2C
14a
Not applicable
Not applicable
14b
Required (1) (2)
Required (1) (2)
15
Required
Not required
16
Required
Not required
(1) See MIL-PRF-19500.
(2) For clear glass diodes, the hermetic seal (gross leak) may be performed at any time after temperature cycling.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows:
a. 1N4565 through 1N4569: IZ = 0.5 mA dc ±0.05 mA dc, TA = +150 +5C, -0C.
b. 1N4570 through 1N4574: IZ = 1.0 mA dc ±0.1 mA dc, TA = +150 +5C, -0C.
c. 1N4575 through 1N4579: IZ = 2.0 mA dc ±0.2 mA dc, TA = +150 +5C, -0C.
d. 1N4580 through 1N4584: IZ = 4.0 mA dc ±0.4 mA dc, TA = +150 +5C, -0C.
To better utilize burn-in equipment, higher values of IZ shall be permitted provided the junction temperature
does not exceed +175C.
4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500.
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