MIL-PRF-19500-452 Semiconductor Device, Diode, Silicon, Temperature Compensated, Voltage Reference, Types 1N4565A-1 Through 1N4584A-1, And 1N4565Aur-1 Through 1N4584Aur-1, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc, Radiation Hardened \(Total Dose Only\) Types Jantxvm, D, L, R, F, G, H; Jansm, D, L, R, F, G, H, Janhcm, D, L, R, F, G, H; And Jankcm, D, L, R, F, G, HThis specification covers the performance requirements for 6.4 volts ┬▒5 percent, silicon, low bias current, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die. Seven levels of radiation hardened \(total dose only\) product assurance are provided for each encapsulated device type, and two levels of product assurance for each unencapsulated device type die as specified in MIL-PRF-19500.

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MIL-PRF-19500/452J

DO-7, 35

Dimensions

Symbol

Notes

Inches

Millimeters

Min

Max

Min

Max

.060

.107

1.52

2.72

.120

.300

3.05

7.62

.018

.023

0.46

0.58

1.000

1.500

25.40

38.10

LL1

0.050

1.27

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Package contour optional within BD and length BL. Heat slugs, if any, shall be included within this cylinder but

shall not be subject to minimum limit of BD.

4. Within this zone, lead diameter may vary to allow for lead finishes and irregularities, other than heat slugs.

5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology.

FIGURE 1. Physical dimensions 1N4565A-1 through 1N4584A-1 (DO-7 and DO-35).