MIL-PRF-19500-452 Semiconductor Device, Diode, Silicon, Temperature Compensated, Voltage Reference, Types 1N4565A-1 Through 1N4584A-1, And 1N4565Aur-1 Through 1N4584Aur-1, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc, Radiation Hardened \(Total Dose Only\) Types Jantxvm, D, L, R, F, G, H; Jansm, D, L, R, F, G, H, Janhcm, D, L, R, F, G, H; And Jankcm, D, L, R, F, G, HThis specification covers the performance requirements for 6.4 volts ┬▒5 percent, silicon, low bias current, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die. Seven levels of radiation hardened \(total dose only\) product assurance are provided for each encapsulated device type, and two levels of product assurance for each unencapsulated device type die as specified in MIL-PRF-19500.

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MIL-PRF-19500/452J

4.4.4 Group D inspection. Group D inspection shall be conducted in accordance with table E-VIII of

MIL-PRF-19500 and table II herein. Submitted lots for group D sample inspection must be constructed using one

homogeneous wafer lot for the zener and one wafer lot for the compensating die (die), as also described in the

submitted DSCC Design and Construction form 36D (see table II herein).

4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup tests in table E-IX of MIL-PRF-19500 and table III herein.

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows.

4.5.1 Voltage temperature stability. The breakdown voltage of each type shall be measured and recorded at each

of the specified temperatures. The lowest measured voltage shall be subtracted from the highest measured voltage

for each diode. The difference value obtained shall not exceed the specified VZ for each diode type.

4.5.2 Reference voltage time stability. The breakdown voltage shall be measured prior to life testing, at 340 hours,

and at the conclusion of the life test. The 340-hour reading shall be compared with the 0-hour reading and the

1,000-hour reading compared with the 340-hour reading. The change in breakdown voltage shall not exceed the

limits specified. The test temperature for breakdown voltage shall be the same as the specified ambient life test

temperature (see table IV herein).

4.5.3 Reference voltage. The test current shall be applied until thermal equilibrium is attained (15 s maximum)

prior to reading the reference voltage. For this test, the diode shall be suspended by its leads with mounting clips

whose inside edge is located at .375 inch (9.53 mm) from the body and the mounting clips shall be maintained at the

specified temperature. This measurement may be performed after a shorter time following application of the test

current than that which provide thermal equilibrium if correlation to stabilized readings can be established to the

satisfaction of the Government.