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MIL-PRF-19500-452 Semiconductor Device, Diode, Silicon, Temperature Compensated, Voltage Reference, Types 1N4565A-1 Through 1N4584A-1, And 1N4565Aur-1 Through 1N4584Aur-1, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc, Radiation Hardened \(Total Dose Only\) Types Jantxvm, D, L, R, F, G, H; Jansm, D, L, R, F, G, H, Janhcm, D, L, R, F, G, H; And Jankcm, D, L, R, F, G, HThis specification covers the performance requirements for 6.4 volts ┬▒5 percent, silicon, low bias current, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die. Seven levels of radiation hardened \(total dose only\) product assurance are provided for each encapsulated device type, and two levels of product assurance for each unencapsulated device type die as specified in MIL-PRF-19500.

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MIL-PRF-19500/452J
1.4 Primary electrical characteristics. Unless otherwise specified, primary electrical characteristics at TA = +25C.
Column 1
Column 2
Column 3
Column 4
Column 5
VZ
IR
ZZ
VZ
VR = 3.0 V
IZ = 0.5 mA dc
(voltage-
Type  (1)
IZ = 0.5 mA dc
temperature
stability) (2)
Min
Max
A
V dc
ohms
Volts
Volts
1N4565A-1, 1N4565AUR-1
0.100
200
6.08
6.72
2.0
1N4566A-1, 1N4566AUR-1
0.050
200
6.08
6.72
2.0
1N4567A-1, 1N4567AUR-1
0.020
200
6.08
6.72
2.0
1N4568A-1, 1N4568AUR-1
0.010
200
6.08
6.72
2.0
1N4569A-1, 1N4569AUR-1
0.005
200
6.08
6.72
2.0
VZ
VZ
ZZ
IR
IZ = 1.0 mA dc
VR = 3.0 V
(voltage-
Type  (1)
IZ = 1.0 mA dc
temperature
stability) (2)
Min
Max
A
V dc
ohms
Volts
Volts
1N4570A-1, 1N4570AUR-1
0.100
100
6.08
6.72
2.0
1N4571A-1, 1N4571AUR-1
0.050
100
6.08
6.72
2.0
1N4572A-1, 1N4572AUR-1
0.020
100
6.08
6.72
2.0
1N4573A-1, 1N4573AUR-1
0.010
100
6.08
6.72
2.0
1N4574A-1, 1N4574AUR-1
0.005
100
6.08
6.72
2.0
VZ
IR
ZZ
VZ
VR = 3.0 V
IZ = 2.0 mA dc
(voltage-
Type  (1)
IZ = 2.0 mA dc
temperature
stability) (2)
Min
Max
A
V dc
ohms
Volts
Volts
1N4575A-1, 1N4575AUR-1
0.100
50
6.08
6.72
2.0
1N4576A-1, 1N4576AUR-1
0.050
50
6.08
6.72
2.0
1N4577A-1, 1N4577AUR-1
0.020
50
6.08
6.72
2.0
1N4578A-1, 1N4578AUR-1
0.010
50
6.08
6.72
2.0
1N4579A-1, 1N4579AUR-1
0.005
50
6.08
6.72
2.0
VZ
IR
ZZ
VZ
VR = 3.0 V
IZ = 4.0 mA dc
(voltage-
Type  (1)
IZ = 4.0 mA dc
temperature
stability) (2)
Min
Max
A
V dc
ohms
Volts
Volts
1N4580A-1, 1N4580AUR-1
0.100
25
6.08
6.72
2.0
1N4581A-1, 1N4581AUR-1
0.050
25
6.08
6.72
2.0
1N4582A-1, 1N4582AUR-1
0.020
25
6.08
6.72
2.0
1N4583A-1, 1N4583AUR-1
0.010
25
6.08
6.72
2.0
1N4584A-1, 1N4584AUR-1
0.005
25
6.08
6.72
2.0
(1) Electrical characteristics and test conditions for "A-1, and AUR-1" devices are identical.
(2) To guarantee voltage temperature stability, it is necessary to maintain the proper IZ as specified herein.
2



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