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MIL-PRF-19500-452 Semiconductor Device, Diode, Silicon, Temperature Compensated, Voltage Reference, Types 1N4565A-1 Through 1N4584A-1, And 1N4565Aur-1 Through 1N4584Aur-1, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc, Radiation Hardened \(Total Dose Only\) Types Jantxvm, D, L, R, F, G, H; Jansm, D, L, R, F, G, H, Janhcm, D, L, R, F, G, H; And Jankcm, D, L, R, F, G, HThis specification covers the performance requirements for 6.4 volts ┬▒5 percent, silicon, low bias current, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die. Seven levels of radiation hardened \(total dose only\) product assurance are provided for each encapsulated device type, and two levels of product assurance for each unencapsulated device type die as specified in MIL-PRF-19500.

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MIL-PRF-19500/452J
4.4.2.2 Group B inspection, table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Method
Conditions
Subgroup
B1
2026
As specified.
B1
1022
As specified.
B2
1056
Test condition A, 25 cycles.
B2
4066
Not applicable.
B2
1071
Test condition E.
B3
1027
Conditions for "A-1" and "AUR-1" versions: (see 4.3.1).
B4
2075
As specified.
B5
Not applicable.
B6
1032
As specified.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) requirements shall be in
accordance with the applicable steps of table I, subgroup 2 herein.
4.4.3.1 Group C inspection, table E-VII of MIL-PRF-19500.
Subgroup
Method
Conditions
C1
2066
As specified.
C2
1056
Test condition A, 25 cycles.
C2
2036
Tension: Test condition A; 4 pounds weight, t = 15 ±3 seconds; Lead fatigue: Test
condition E (lead fatigue and tension tests are not applicable to surface mount "UR"
version devices).
C2
1071
Test condition E.
C2
1021
Omit initial conditioning.
C3
Not applicable.
C4
1041
As specified.
C5
Not applicable.
C6
1026
Conditions for "A-1 and AUR-1" versions of:
1N4565 through 1N4569: IZ = 0.5 mA dc, TA = +100C (see 4.5.2).
1N4570 through 1N4574: IZ = 1.0 mA dc, TA = +100C (see 4.5.2).
1N4575 through 1N4579: IZ = 2.0 mA dc, TA = +100C (see 4.5.2).
1N4580 through 1N4584: IZ = 4.0 mA dc, TA = +100C (see 4.5.2).
C7
Not applicable.
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