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MIL-PRF-19500-455 Semiconductor Device, Transistor, Npn, Silicon, Power Switching, Types 2N5664, 2N5665, 2N5666, 2N5666S, 2N5666U3, 2N5667, And 2N5667S, Jan, Jantx, Jantxv, Jantxvr, Jantxvf, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, And Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And JankchThis specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each un-encapsulated device type as specified in MIL-PRF-19500. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS product assurance level. Radiation hardness assurance \(RHA\) level designators; "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/455K

Dimensions

Ltr

Inches

Millimeters

Notes

Min

Max

Min

Max

.250

.340

6.35

8.64

.028

.034

0.71

0.86

7,9

.470

.500

11.94

12.70

.190

.210

4.83

5.33

PS1

.093

.107

2.36

2.72

.050

.075

1.27

1.91

2, 5

.360

.500

9.14

12.70

.050

1.27

MHD

.142

.152

3.61

3.86

MHS

.958

.962

24.33

24.43

.350

8.89

HR1

.115

.145

2.92

3.68

.570

.590

14.48

14.99

NOTES:

Dimensions are in inches. Millimeters are given for general information only.

Body contour is optional within zone defined by CD.

These dimensions shall be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating

plane. When gauge is not used, measurement shall be made at seating plane.

Within this zone the lead diameter may vary to allow for lead finishes and irregularities.

HT dimension does not include sealing flanges.

The seating plane of header shall be flat within .001 inch (0.025 mm), concave to .004 inch (0.101 mm),

convex inside a .520 inch (13.20 mm) diameter circle on the center of the header, and flat within .001

inch (0.025 mm), concave to .006 inch (0.152 mm), convex overall.

Both terminals.

The collector shall be electrically connected to the case.

LD applies between L1 and LL. Lead diameter shall not exceed twice LD within L1.

10.

Pin 1 is the emitter, pin 2 is the base.

In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

11.

FIGURE 1. Physical dimensions of transistor types 2N5664 and 2N5665.