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MIL-PRF-19500-455 Semiconductor Device, Transistor, Npn, Silicon, Power Switching, Types 2N5664, 2N5665, 2N5666, 2N5666S, 2N5666U3, 2N5667, And 2N5667S, Jan, Jantx, Jantxv, Jantxvr, Jantxvf, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, And Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And JankchThis specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each un-encapsulated device type as specified in MIL-PRF-19500. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS product assurance level. Radiation hardness assurance \(RHA\) level designators; "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15

MIL-PRF-19500/455K

Dimensions

Ltr

Inches

Millimeters

Notes

Min

Max

Min

Max

.305

.335

7.75

8.51

.240

.260

6.10

6.60

.335

.370

8.51

9.40

.200 TP

5.08 TP

.016

.021

0.41

0.53

See notes 13 and 14

.050

1.27

.250

6.35

.016

.019

0.41

0.48

.100

2.54

.007

0.18

45� TP

.029

.045

0.74

1.14

.028

.034

0.71

0.86

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Measured in the zone beyond .250 inch (6.35 mm) from the seating plane.

4. Measured in the zone .050 inch (1.27 mm) and .250 inch (6.35 mm) from the seating plane.

5. Variations on dimension CD in this zone shall not exceed .010 inch (0.25 mm).

6. Outline in this zone is not controlled.

7. When measured in a gauging plane .054 inch +.001, -.000 (1.37 mm +.03, -.00 ) below the seating plane of

the transistor, maximum diameter leads shall be within .007 inch (.18 mm) of their true location relative to a

maximum width tab. Smaller diameter leads shall fall within the outline of the maximum diameter lead

tolerance.

8. The collector shall be electrically connected to the case.

9. Measured from the maximum diameter of the actual device.

10. All three leads

11. Diameter of leads in this zone is not controlled.

12. Lead 1 - emitter; lead 2 - base, lead 3 - collector.

13. For transistor types 2N5666 and 2N5667, LL is 1.500 inch (38.1 mm) minimum and 1.75 inch

(44.45 mm) maximum.

14. For transistor types 2N5666S and 2N5667S, LL is .500 inch (12.7 mm) minimum and .75 inch

(19.05 mm) maximum.

15. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

FIGURE 2. Physical dimensions of transistor types 2N5666, 2N5666S,

2N5667 and 2N5667S (TO-5 and TO-39).