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MIL-PRF-19500-455 Semiconductor Device, Transistor, Npn, Silicon, Power Switching, Types 2N5664, 2N5665, 2N5666, 2N5666S, 2N5666U3, 2N5667, And 2N5667S, Jan, Jantx, Jantxv, Jantxvr, Jantxvf, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, And Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And JankchThis specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each un-encapsulated device type as specified in MIL-PRF-19500. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS product assurance level. Radiation hardness assurance \(RHA\) level designators; "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/455K
.120 x .120 inch ±.002 inch (3.05 mm x 3.05 mm ±0.051 mm).
1.
Chip size:
2.
Chip thickness:
.015 inch nominal, (0.381 mm).
3.
Top metal:
Aluminum 54kÅ minimum, 66kÅ nominal
4.
Back metal:
Al/Ti/Ni/Au10kÅ minimum, 12.5kÅ nominal.
5.
Backside:
Collector
6.
Bonding pad:
B = .038 x .022 inch (0.97 mm x 0.56 mm),
E = .042 x .020 inch (1.07 mm x 0.51 mm).
FIGURE 4. JANHC and JANKC (A-version) die dimensions for 2N5665/2N5667.
6



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