MIL-PRF-19500-455 Semiconductor Device, Transistor, Npn, Silicon, Power Switching, Types 2N5664, 2N5665, 2N5666, 2N5666S, 2N5666U3, 2N5667, And 2N5667S, Jan, Jantx, Jantxv, Jantxvr, Jantxvf, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, And Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And JankchThis specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each un-encapsulated device type as specified in MIL-PRF-19500. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS product assurance level. Radiation hardness assurance \(RHA\) level designators; "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/455K

Symbol

Dimensions

Symbol

Dimensions

Inches

Millimeters

Inches

Millimeters

.119

.123

3.02

3.12

.028

.032

0.71

0.81

.061

.065

1.55

1.65

.006

.010

0.15

0.25

.026

.031

0.66

0.79

.004

.008

0.10

0.20

.058

.062

1.47

1.57

.006

.010

0.15

0.25

Chip Size:

0.121 x 0.121 inch � 0.002" (3.07 x 3.07 mm � 0.051 mm)

Chip Thickness:

0.008 inch nominal (0.203 mm)

Top Metal:

Aluminum: 17.5K� min, 20K� nominal

Back Metal:

Au: 1.7K� min, 2.4K� nominal (totals)

Backside Contact:

Collector

Bonding Pads:

B = 0.063 x 0.008 inch (1.600 x 0.205 mm)

E = 0.060 x 0.008 inch (1.535 x 0.205 mm)

* FIGURE 6. JANHCB and JANKCB die dimensions for 2N5664 and 2N5666.