MIL-PRF-19500-455 Semiconductor Device, Transistor, Npn, Silicon, Power Switching, Types 2N5664, 2N5665, 2N5666, 2N5666S, 2N5666U3, 2N5667, And 2N5667S, Jan, Jantx, Jantxv, Jantxvr, Jantxvf, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, And Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And JankchThis specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each un-encapsulated device type as specified in MIL-PRF-19500. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS product assurance level. Radiation hardness assurance \(RHA\) level designators; "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/455K

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of

MIL-PRF-19500 and table I herein. End-point electrical measurements shall be in accordance with table I,

subgroup 2.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions

specified for subgroup testing in table E-VIA (JANS) and table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500

and 4.4.2.1 and 4.4.2.2 herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2.

Delta measurements shall be in accordance with the steps in table II herein as specified in the notes for table II.

4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500.

Subgroup

Method

Condition

VCB = 30 V dc minimum, TA = +25�C �3�C; ton = toff = 3 minutes minimum.

1037

No heat sink or forced-air cooling on the heating cycle shall be permitted.

See 4.5.3 herein.

1027

4.4.2.2 Group B inspection, table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500.

Subgroup

Method

Condition

TJ = +187.5�C �12.5�C, VCE = 100 �5 V dc; TA = ≤ +55�C. The applied PT minimum

1027

of PT1 = 75 percent.

3131

Not applicable.

4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the tests and conditions

specified for subgroup testing in table E-VII of MIL-PRF-19500 and herein. Electrical measurements (end-points)

shall be in accordance with table I, subgroup 2. Delta measurements shall be in accordance with the steps in table II

herein and as specified in the notes for table II.

Subgroup

Method

Condition

2036

Terminal strength (tension) 2N5664 and 2N5665 only: Test condition A,

weight = 10 pounds, application time = 15 seconds.

Terminal strength (lead fatigue) 2N5666, 2N5666S, 2N5667, and 2N5667S

only: Test condition E (not applicable to 2N5666U3).

3131

See 1.3 and 4.3.3 herein.

TJ = +187.5�C �12.5�C, VCE = 100 �5 V dc; TA = ≤ +55�C. The applied

1026

PT minimum of PT1 = 75 percent.

4.4.4 Group D inspection. Conformance Inspection for hardness assured JANTXV, JANS, and JANKC types shall

include the group D tests specified in table III herein. These tests shall be performed as required in accordance with

MIL-PRF-19500 and method 1019 of MIL-STD-750, for total ionizing dose, or method 1017 of MIL-STD-750 for

neutron fluence, as applicable (see 6.2.e herein), except group D subgroup 2 may be performed separately from

other subgroups. Alternate package options may also be substituted for the testing provided there is no adverse

effect to the fluence profile.