MIL-PRF-19500-455 Semiconductor Device, Transistor, Npn, Silicon, Power Switching, Types 2N5664, 2N5665, 2N5666, 2N5666S, 2N5666U3, 2N5667, And 2N5667S, Jan, Jantx, Jantxv, Jantxvr, Jantxvf, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, And Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And JankchThis specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each un-encapsulated device type as specified in MIL-PRF-19500. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS product assurance level. Radiation hardness assurance \(RHA\) level designators; "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/455K

NOTES:

1. The input waveform is supplied by a pulse generator with the following characteristics: tr ≤ 15 ns, tf ≤ 15 ns,

Zout = 50 ohm, PW = 10 �s, duty cycle ≤ 2 percent.

2. Output waveforms are monitored on an oscilloscope with the following characteristics: tr ≤ 15 ns,

Zin ≥ 10 MΩ, Cin ≤ 11.5 pF.

3. Resistors shall be noninductive types.

4. The dc power supplies may require additional bypassing in order to minimize ringing.

5. The input pulse voltages and supply voltages (-4 V dc and +100 V dc) are nominal and shall be adjusted to

obtain IB1 = - IB2 = 50 mA and IC = 1 A.

6. An equivalent circuit may be used.

7. 0.02 �F capacitor may be removed during voltage adjustments.

FIGURE 17. Pulse response test circuit for types 2N5665, 2N5667, and 2N5667S.