INCH-POUND
The documentation and process conversion
MIL-PRF-19500/474G
measures necessary to comply with this revision
22 August 2008
shall be completed by 22 November 2008.
SUPERSEDING
MIL-PRF-19500/474F
23 January 2007
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, SILICON, MULTIPLE DIODE ARRAYS,
TYPES 1N5768, 1N5770, 1N5772, 1N5774, 1N6100, 1N6101, 1N6496,
1N6506, 1N6507, 1N6508, 1N6509, 1N6510, AND 1N6511,
JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Departments and Agencies
of the Department of Defense.
The requirements for acquiring the product described herein shall consist
of this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for silicon, multiple diode arrays. Four levels
of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figures 1, 2, 3, 4, 5, 6, 7, and 8.
1.3 Maximum ratings. Unless otherwise specified T = +25°C.
A
Type
VBR(R) 1/ 2/
PT
IO 1/ 3/
IFSM 1/
TJ
TSTG
TA = +25°C
TA = +25°C
tp = 1/120 s
°C
°C
mA dc
mA dc
mW
V dc
1N5768
60
300
500
4/
500
-65 to +175
-65 to +200
1N5770
60
300
500
4/
500
1N5772
60
300
500
4/
500
1N5774
60
300
500
4/
500
1N6496
60
300
500
4/
500
1N6506
60
300
500
5/
600
1N6507
60
300
500
5/
600
1N6508
60
300
500
5/
600
1N6509
60
300
500
5/
600
1N6100
75
300
500
4/
500
1N6101
75
300
500
5/
600
1N6510
75
300
500
4/
500
75
300
500
1N6511
5/
600
1/ Each diode.
2/ Pulsed: PW = 100 ms maximum; duty cycle ≤ 20 percent.
3/ Derate at 2.0 mA/°C above +25°C.
4/ Derate at 3.33 mW/°C above +25°C.
5/ Derate at 4.0 mW/°C above +25°C.
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
semiconductor@dscc.dla.mil . Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at https://assist.daps.dla.mil .
AMSC N/A
FSC 5961
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