MIL-PRF-19500-474 Semiconductor Device, Silicon, Multiple Diode Arrays, Types 1N5768, 1N5770, 1N5772, 1N5774, 1N6100, 1N6101, 1N6496, 1N6506, 1N6507, 1N6508, 1N6509, 1N6510, And 1N6511 Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for silicon, multiple diode arrays. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/474G

4.3 Screening (JANS, JANTXV, and JANTX levels). Screening shall be in accordance with table E-IV of

MIL-PRF-19500 and as specified herein. Specified electrical measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen

Measurements

(see table E-IV of

JANS level

JANTX and JANTXV levels

MIL-PRF-19500)

Method 2010 of MIL-STD-883,

condition B

condition B (JANTXV only)

Optional

Not applicable

IR1 and VF1

See 4.3.1

Subgroups 2 and 3 of table I herein;

Subgroup 2 of table I herein;

ΔIR1 = 100 percent ofinitial reading

ΔIR1 = 100 percent ofinitial reading or

or 10 nA dc, whichever is greater;

�25 nA dc, whichever is greater;

ΔVF1 = �25 mV dc of initial reading.

ΔVF1 = �30 mV dc of initial reading.

Required

4.3.1 Power burn-in conditions. Power burn-in conditions are as follows (see 4.5.7): TA = +150�C. Time = 72

hours minimum. VR = 50 V dc for 1N5768, 1N5770, 1N5772, 1N5774, 1N6496, 1N6506, 1N6507, 1N6508, and

1N6509. VR = 60 V dc for 1N6100, 1N6101, 1N6510, and 1N6511.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as

specified herein.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of

MIL-PRF-19500, table I herein, and as specified herein. Electrical measurements (end-points) shall be in

accordance with table I, subgroup 2 herein.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-VIa (JANS) and table E-VIb (JAN, JANTX, JANTXV) of MIL-PRF-19500 and as specified

herein. Electrical measurements (end-points) and delta requirements shall be in accordance with table I, subgroup

2 herein.

4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500.

Method

Conditions

Subgroup

TA = +150�C each diode DC blocking, VR = 50 V dc.

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4.4.2.2 Group B inspection, table E-VIb (JANTX and JANTXV) of MIL-PRF-19500.

Method

Conditions

Subgroup

DC blocking; TA = +150�C; VR = 50 V dc.

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