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MIL-PRF-19500-474 Semiconductor Device, Silicon, Multiple Diode Arrays, Types 1N5768, 1N5770, 1N5772, 1N5774, 1N6100, 1N6101, 1N6496, 1N6506, 1N6507, 1N6508, 1N6509, 1N6510, And 1N6511 Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for silicon, multiple diode arrays. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/474G
* 1.4 Primary electrical characteristics, each diode.
Type
VF1 (1)
VF2 1/
IR1
trr
Ct
tfr
IF =
IF =
VR = 40 V dc
IF = IR =
IF =
100 mA dc
500 mA dc
200 mA dc
500 mA dc
RL = 100 Ω
Irr = 20 mA dc
μA dc
V dc
V dc
pF
ns
ns
Min
Min
Min
Min
Min
Min
Max
Max
Max
Max
Max
Max
1N5768
1.0
1.5
0.1
4
40
20
1N5770
1.0
1.5
0.1
8
40
20
1N5772
1.0
1.5
0.1
8
40
20
1N5774
1.0
1.5
0.1
8
40
20
1N6496
1.0
1.5
0.1
8
40
20
1N6506
1.0
1.5
0.1
4
40
20
1N6507
1.0
1.5
0.1
8
40
20
1N6508
1.0
1.5
0.1
8
40
20
1N6509
1.0
1.5
0.1
8
40
20
Type
VF1
IR2
Ct
tfr
trr
IF =
VR = 20 V dc
IF =
IF = IR =
100 mA dc
100 mA dc
10 mA dc
RL = 100 Ω
Irr = 1 mA dc
V dc
nA dc
pF
ns
ns
Min
Min
Min
Min
Min
Max
Max
Max
Max
Max
1N6100
1.0
25
4
15
10
1N6101
1.0
25
4
15
10
1N6510
1.0
25
4
15
10
1N6511
1.0
25
4
15
10
(1) Pulsed: PW = 300 µs ±50 µs, duty cycle ≤ 2 percent, 90 µs after leading edge of pulse.
2



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