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MIL-PRF-19500-476 Semiconductor Device, Field Effect Transistors, P-Channel, Silicon, Types 2N5114 Through 2N5116 And 2N5114Ub Through 2N5116Ub, Jan, Jantx, And JantxvThis specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/476F
* TABLE I. Group A inspection - Continued.
Inspection 1/
Symbol
Unit
Limits
Method
Conditions
Min
Max
Subgroup 4 - Continued
tf
3459
Fall time
15
ns
2N5114, 2N5114UB
30
ns
2N5115, 2N5115UB
2N5116, 2N5116UB
60
ns
Subgroups 5 and 6
Not applicable
1/ For sampling plan, see MIL-PRF-19500.
TABLE II. Group E inspection (all quality levels) for qualification or re-qualification only.
Inspection
Sample
plan
Method
Conditions
Subgroup 1
45 devices
c=0
-55°C to +150°C, 500 cycles
Temperature cycling
1051
Hermetic seal
1071
Fine leak
Gross leak
Electrical measurements
See table I, subgroup 2
Subgroup 2 1/
45 devices
c=0
Blocking life
1048
1,000 hours minimum, TA = +150°C, VDG or VGS = 80
percent of rated.
Electrical measurements
See table I, subgroup 2
Subgroups 4 and 5
Not applicable
1/ A separate sample for each test shall be pulled.
10



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