MIL-PRF-19500-476 Semiconductor Device, Field Effect Transistors, P-Channel, Silicon, Types 2N5114 Through 2N5116 And 2N5114Ub Through 2N5116Ub, Jan, Jantx, And JantxvThis specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/476F

Test conditions and component value

Type

VDD VGG RL

ID(ON) (1)

V dc V dc ohms ohms �A dc

2N5114, 2N5114UB

-10 20 430 100

-15

2N5115, 2N5115UB -6.0 12 910 220

-7.0

2N5116, 2N5116UB -6.0 8.0 2,000 390

-3.0

(1) Nominal value; exact value varies slightly with transistor parameters.

NOTES:

1. The input waveform has the following characteristics: tp = 100 ns; tr ≤ 1 ns; tf ≤ 1 ns;

duty cycle ≈ 2 percent. It is supplied by a generator with Zout = 50 ohms.

2. Resistor tolerance is � 10 percent.

3. Voltage limits for the Vin voltage (input switching levels) are as follows:

2N5114, 2N5114UB

Vin. = 11 V dc (from 0 v to -11 V dc signal level).

2N5115, 2N5115UB

Vin. = 7 V dc (from 0 v to -7 V dc signal level).

2N5116, 2N5116UB

Vin. = 5 V dc (from 0 v to -5 V dc signal level).

FIGURE 3. Switching time test circuit.