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MIL-PRF-19500-476 Semiconductor Device, Field Effect Transistors, P-Channel, Silicon, Types 2N5114 Through 2N5116 And 2N5114Ub Through 2N5116Ub, Jan, Jantx, And JantxvThis specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/476F
* TABLE I. Group A inspection - Continued.
Limits
Inspection 1/
Symbol
Unit
Method
Conditions
Min
Max
Subgroup 3
TA = +150°C
High temperature operation:
µA dc
3411
IGSS
1.0
Gate reverse current
Bias condition C,
VGS = 20 V dc; VDS = 0
Drain cutoff current
3413
Bias condition A;
ID(off)2
µA dc
2N5114, 2N5114UB
VGS = 12 V dc; VDS = -15 V dc
-1.0
µA dc
2N5115, 2N5115UB
VGS = 7.0 V dc; VDS = -15 V dc
-1.0
µA dc
2N5116, 2N5116UB
VGS = 5.0 V dc; VDS = -15 V dc
-1.0
Subgroup 4
Small-signal common-source
3431
VDS = -15 V dc; VGS = 0
Ciss
short-circuit input
f = 1 MHz
capacitance
2N5114, 2N5114UB
25
pF
2N5115, 2N5115UB
25
pF
2N5116, 2N5116UB
27
pF
Small-signal common-source
3433
Crss
short-circuit reverse
transfer capacitance
2N5114, 2N5114UB
VDS = 0; VGS = 12 V dc
7.0
pF
2N5115, 2N5115UB
VDS = 0; VGS = 7.0 V dc
7.0
pF
2N5116, 2N5116UB
VDS = 0; VGS = 5.0 V dc
7.0
pF
Turn-on delay time
3459
td(on)
2N5114, 2N5114UB
6
ns
2N5115, 2N5115UB
10
ns
2N5116, 2N5116UB
25
ns
Rise time
3459
tr
2N5114, 2N5114UB
10
ns
2N5115, 2N5115UB
20
ns
2N5116, 2N5116UB
35
ns
Turn-off delay time
3459
td(off)
2N5114, 2N5114UB
6
ns
2N5115, 2N5115UB
8
ns
2N5116, 2N5116UB
20
ns
See footnote at end of table
9



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