MIL-PRF-19500-488 Semiconductor Device, Transistor, Npn, Silicon, High-Power, Types 2N5671 And 2N5672, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for NPN, silicon, high-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/488E

* TABLE I. Group A inspection - Continued.

Inspection 1/

MIL-STD-750

Symbol

Limits

Unit

Method

Conditions

Min

Max

3053

Load condition B;

Safe operating

(clamped inductive load)

area (switching)

(see figure 6);

TC = +25C;

Duty cycle  10 percent;

tp > 10 s; RS = 0.1 ohm;

RBB1 = 1;

VBB1 = 10 V dc max;

RBB2 = 20;

VBB2 = 4 V dc;

IC = 30 A dc;

VCC = 90 V dc (2N5671)

and 120 V dc (2N5672);

RL  3.0  (2N5671), 4.0 

(2N5672);

L = 50 H, 0.1 ;

CR = 1N1186A;

Clamp voltage = 90 V dc +0, -5

(2N5671); 120 V dc +0, -5

(2N5672).

Device fails if clamp voltage is

not reached.

See table I, subgroup 2 herein

Electrical

measurements

Subgroups 6 and 7

Not applicable

For sampling plan, see MIL-PRF-19500.

This test required for the following end-point measurements only:

Group B, subgroups 3, 4, and 5 (JANS).

Group B, subgroups 2 and 3 (JAN, JANTX, and JANTXV).

Group C, subgroup 2 and 6.

Group E, subgroup 1.