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MIL-PRF-19500-488 Semiconductor Device, Transistor, Npn, Silicon, High-Power, Types 2N5671 And 2N5672, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for NPN, silicon, high-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/488E
* TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 1
2071
Visual and mechanical
inspection
Subgroup 2
°C/W
See 4.3.2
3131
Thermal impedance 2/
ZθJC
3011
Breakdown voltage,
IC = 200 mA dc; L = 15 mH;
V(BR)CEO
collector to emitter
30 Hz f 60 Hz, (see figure 3)
V dc
2N5671
90
V dc
2N5672
120
3011
Breakdown voltage,
IC = 200 mA dc; L = 15 mH;
V(BR)CER
collector to emitter
RBE = 50 ohms; 30 Hz f 60 Hz
(see figure 3)
V dc
2N5671
110
V dc
2N5672
140
3011
Breakdown voltage,
IC = 200 mA dc; L = 2 mH;
V(BR)CEX
collector to emitter
VBE = -1.5 V dc; 30 Hz f 60 Hz
(see figure 3)
2N5671
V dc
120
2N5672
V dc
150
Bias condition D;
3061
10
mA dc
Emitter to base
IEBO
cutoff current
VEB = 7.0 V dc
Bias condition D;
3041
10
mA dc
Collector to emitter
ICEO
cutoff current
VCE = 80 V dc
3041
Collector to emitter
Bias condition A; VBE = 1.5 V dc
ICEX1
cutoff current
VCE = 110 V dc
A dc
*
2N5671
250
VCE = 135 V dc
A dc
2N5672
*
250
3036
Bias condition D
Collector to base
25
mA dc
ICBO
cutoff current
2N5671
VCE = 120 V dc
2N5672
VCE = 150 V dc
3076
Forward-current
20
100
VCE = 2.0 V dc;
hFE1
transfer ratio
IC = 15 A dc;
pulsed (see 4.5.1)
See footnotes at end of table.
7



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