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MIL-PRF-19500-488 Semiconductor Device, Transistor, Npn, Silicon, High-Power, Types 2N5671 And 2N5672, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for NPN, silicon, high-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/488E
* TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 2 - Continued
3076
20
Forward-current
VCE = 5.0 V dc; IB = 20 A dc;
hFE2
transfer ratio
pulsed (see 4.5.1)
3071
0.75
V dc
Collector to emitter
IC = 15 A dc;
VCE (sat)1
voltage (saturated)
IB = 1.2 A dc;
pulsed (see 4.5.1)
3066
Test condition A;
Base emitter voltage
V dc
1.5
VBE(sat)
(saturated)
IB = 1.2 A dc;
IC = 15 A dc;
pulsed (see 4.5.1)
Collector to emitter
3071
IC = 30 A dc;
voltage (saturated)
IB = 6 A dc;
V dc
5.0
VCE(sat)2
pulsed (see 4.5.1)
Subgroup 3
TA = +150C
High temperature
operation:
3041
Bias condition A;
Collector to emitter
ICEX2
cutoff current
VBE = -1.5 V dc;
VCE = 100 V dc
mA dc
15
2N5671
VCE = 100 V dc
mA dc
10
2N5672
TA = -65C
Low temperature
operation:
Forward-current
3076
10
VCE = 2.0 V dc;
hFE3
transfer ratio
IC = 15 A dc;
pulsed (see 4.5.1)
10
40
Subgroup 4
|hfe|
3306
Magnitude of small-
VCE = 10 V dc;
signal short-circuit
IC = 2.0 A dc;
forward-current
f = 5.0 MHz
transfer ratio
3236
900
pF
Open circuit output
VCB = 10 V dc; IE = 0;
Cobo
capacitance
100 kHz f 1 MHz
See footnotes at end of table.
8



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