The documentation and process conversion
INCH-POUND
measures necessary to comply with this revision
shall be completed by 23 February 2012.
MIL-PRF-19500/507F
23 November 2011
SUPERSEDING
MIL-PRF-19500/507E
7 August 2007
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT
VOLTAGE SUPPRESSOR, TYPES 1N6036A THROUGH 1N6072A
JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 1500 watt, bi-directional, silicon, transient
voltage suppressor diodes. Three levels of product assurance are provided for each device as specified in
1.2 Physical dimensions. See figure 1 (DO�13).
b. PM(AV) = 1.0 W (derate at 6.67 mW/�C above TA = +25�C) (see 6.4).
c. -55�C ≤ TJ ≤ +175�C (ambient), -55�C ≤ TSTG ≤ +175�C (ambient).
1.4 Primary electrical characteristics at TA = +25�C. Primary ratings are as shown in maximum test ratings (see 3.6).
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