MIL-PRF-19500-507 Semiconductor Device, Diode, Silicon, Bipolar Transient Voltage Suppressor, Types 1N6036A Through 1N6072A Jan, Jantx, And JantxvThis specification covers the performance requirements for 1500 watt, bi-directional, silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device as specified in MIL-PRF-19500.

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MIL-PRF-19500/507F

TABLE III. Group E inspection (all quality levels) for qualification only.

Inspection

Sampling plan

Method

Conditions

Subgroup 1

n = 45, c = 0

500 cycles, condition C, -55�C to +175�C.

Temperature cycling

1051

Electrical measurements

See table IV. Steps 1, 2, 3, 4, and 5.

Subgroup 2

n = 22, c = 0

1,000 hours. See 4.3.1

Life test

Electrical measurements

See table IV, Steps 1, 2, 3, 4, and 5.

Subgroups 3, 4, and 5

Not applicable

Subgroup 7

n = 45, c = 0

Soldering heat

2031

Subgroup 8

See 4.5.2. IPP shall be characterized by the supplier

Peak pulse current

and this data shall be available to the government.

Test shall be performed on each low and high voltage

device for each structurally identical grouping. Test to

failure.

Electrical measurements

See table IV, steps 1, 2, 3, 4, and 5.