MIL-PRF-19500-507 Semiconductor Device, Diode, Silicon, Bipolar Transient Voltage Suppressor, Types 1N6036A Through 1N6072A Jan, Jantx, And JantxvThis specification covers the performance requirements for 1500 watt, bi-directional, silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device as specified in MIL-PRF-19500.

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MIL-PRF-19500/507F

4.5.2 Maximum peak pulse current (Ipp). The peak pulse currents specified in column 7 of table II shall be

applied while simultaneously maintaining a bias voltage of not less than the applicable voltage specified in column 4

of table II, in the same polarity as the peak pulse current. The peak pulse current shall be applied with a current vs

time waveform as follows (1 pulse per minute maximum):

a. Pulse current shall reach 100 percent of IPP at t ≤ 10 �s and decay to 50 percent of IPP at t ≥ 1 ms

for tp = 1 ms (see figure 4).

b. Pulse current shall reach 100 percent of IPP at t ≤ 8 �s and decay to 50 percent of IPP at t ≥ 20 �s

for (see figure 5).

4.5.3 Clamping voltage. The peak pulse clamping voltage shall be measured across the diode in a 1 ms time

interval. The response detector shall demonstrate equipment accuracy of �3 percent. The peak clamping voltage

as specified in column 6 of table II shall be applicable to the 1 ms pulse of 4.5.2.a only.