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MIL-PRF-19500-538 Semiconductor Device, Transistor, Npn, Silicon, Power, Types 2N6676, 2N6678, 2N6676T1, 2N6678T1, 2N6676T3, 2N6678T3, 2N6691, And 2N6693, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhca, Jankca, Jankcam, Jankcad, Jankcap, Jankcal, Jankcar, Jankcaf, Jankcag, And JankcahThis specification covers the performance requirements for NPN silicon, power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/538G
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4.3.4 Dielectric withstanding voltage.
a.
Magnitude of test voltage...................................900 V dc.
b.
Duration of application of test voltage....................15 seconds (min).
c.
Points of application of test voltage........................All leads to case (bunch connection).
d.
Method of connection.........................................Mechanical.
e.
Kilovolt-ampere rating of high voltage source..........1,200 V/1.0 mA (min).
f.
Maximum leakage current....................................1.0 mA.
g.
Voltage ramp up time...................................................500 V/second.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I
herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VIA (JANS) and table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and herein.
Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein.
*
4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500.
Subgroup
Method
Condition
B3
2037
Test condition D, all internal leads for each device shall be pulled separately.
VCB ≥ 100 V dc.
*
B4
1037
VCB = 100 V dc; adjust TA and PD to achieve TJ = +275°C minimum.
B5
1027
PD = 100 percent of rated PT minimum; TA = +100°C maximum.
4.4.2.2 Group B inspection, table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup
Method
Condition
For eutectic die attach: VCB ≥ 100 V dc; adjust PT to achieve TJ =
B3
1027
+175°C minimum; TA = +30°C maximum
For solder die attach: 2,000 cycles, VCB ≥ 100 V dc.
B3
1037
10



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