MIL-PRF-19500/538G
TABLE I. Group A inspection - Continued.
MIL-STD-750
Limit
Symbol
Unit
Inspection 1/
Method
Conditions
Min
Max
Subgroup 3
TA = +125�C
High-temperature operation:
�A dc
Collector to emitter cutoff current
3041
Bias condition A; VBE = -1.5 V dc
ICEX3
50
2N6676, 2N6676T1
VCEX = 450 V dc
2N6676T3, 2N6691
2N6678, 2N6678T1
VCEX = 650 V dc
2N6678T3, 2N6693
Collector to emitter
3071
IC = 15 A dc; IB = 3 A dc;
VCE(sat)2
2.0
V dc
saturated voltage
pulsed (see 4.5.1)
Collector to emitter cutoff current
3041
Bias condition A, VBE = -1.5 V dc
ICEX4
�A
2N6676, 2N6676T1
VCEX = 300 V dc
90
2N6676T3, 2N6691
�A
2N6678, 2N6678T1
VCEX = 400 V dc
90
2N6678T3, 2N6693
TA = -55�C
Low-temperature operation :
Forward-current transfer ratio
3076
VCE = 3 V dc IC = 15 A dc; pulsed
hFE3
4
(see 4.5.1)
Subgroup 4
|hfe|
Magnitude of common emitter
3306
VCE = 10 V dc; IC = 1 A dc;
3
10
small-signal short-circuit
f = 5 MHz
forward- current transfer ratio
Open capacitance (open circuit)
3236
VCB = 10 V dc; IE = 0;
Cobo
150
500
pF
100 kHz ≤ f ≤ 1.0 MHz
TA = +25�C; Test condition A,
Pulse response:
3251
except test circuit and pulse
requirement in accordance with
figure 12
�s
Pulse delay time
td
0.1
�s
Pulse rise time
tr
0.6
�s
Pulse storage time
ts
2.5
�s
Pulse fall time
tf
0.5
�s
Cross over time
tc
0.5
TC = +25�C
Subgroup 5
Safe operating area
3051
(dc operation)
t = 1 s; 1 cycle; (see figure 13)
Test 1
(All device types)
VCE = 11.7 V dc; IC = 15 A dc
See footnote at end of table.
13
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