MIL-PRF-19500/538G
TABLE I. Group A inspection - Continued.
MIL-STD-750
Limit
Symbol
Unit
Inspection 1/
Method
Conditions
Min
Max
Subgroup 3
TA = +125°C
High-temperature operation:
µA dc
Collector to emitter cutoff current
3041
Bias condition A; VBE = -1.5 V dc
ICEX3
50
2N6676, 2N6676T1
VCEX = 450 V dc
2N6676T3, 2N6691
2N6678, 2N6678T1
VCEX = 650 V dc
2N6678T3, 2N6693
Collector to emitter
3071
IC = 15 A dc; IB = 3 A dc;
VCE(sat)2
2.0
V dc
saturated voltage
pulsed (see 4.5.1)
Collector to emitter cutoff current
3041
Bias condition A, VBE = -1.5 V dc
ICEX4
µA
2N6676, 2N6676T1
VCEX = 300 V dc
90
2N6676T3, 2N6691
µA
2N6678, 2N6678T1
VCEX = 400 V dc
90
2N6678T3, 2N6693
TA = -55°C
Low-temperature operation :
Forward-current transfer ratio
3076
VCE = 3 V dc IC = 15 A dc; pulsed
hFE3
4
(see 4.5.1)
Subgroup 4
|hfe|
Magnitude of common emitter
3306
VCE = 10 V dc; IC = 1 A dc;
3
10
small-signal short-circuit
f = 5 MHz
forward- current transfer ratio
Open capacitance (open circuit)
3236
VCB = 10 V dc; IE = 0;
Cobo
150
500
pF
100 kHz ≤ f ≤ 1.0 MHz
TA = +25°C; Test condition A,
Pulse response:
3251
except test circuit and pulse
requirement in accordance with
figure 12
µs
Pulse delay time
td
0.1
µs
Pulse rise time
tr
0.6
µs
Pulse storage time
ts
2.5
µs
Pulse fall time
tf
0.5
µs
Cross over time
tc
0.5
TC = +25°C
Subgroup 5
Safe operating area
3051
(dc operation)
t = 1 s; 1 cycle; (see figure 13)
Test 1
(All device types)
VCE = 11.7 V dc; IC = 15 A dc
See footnote at end of table.
13
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