MIL-PRF-19500-538 Semiconductor Device, Transistor, Npn, Silicon, Power, Types 2N6676, 2N6678, 2N6676T1, 2N6678T1, 2N6676T3, 2N6678T3, 2N6691, And 2N6693, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhca, Jankca, Jankcam, Jankcad, Jankcap, Jankcal, Jankcar, Jankcaf, Jankcag, And JankcahThis specification covers the performance requirements for NPN silicon, power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/538G

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)

before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500 and as follows:

VCEX -

Collector cutoff voltage (dc) with specified circuit between base and emitter.

RISO -

Resistance between device case and leads

3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-

19500 and figure 1 (TO-3) - 2N6676, 2N6678; figure 2 (TO-61) - 2N6691, 2N6693; figure 3 (TO-254AA) - 2N6678T1,

2N6676T1, and figure 4 (TO-257AA) - 2N6676T3 and 2N6678T3 herein, and figure 5.

3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500. Where a choice of lead

finish is desired, it shall be specified in the acquisition document (see 6.2).

3.4.2 Construction. These devices shall be constructed in a manner and using materials which enable the devices

to meet the applicable requirements of MIL-PRF-19500 and this document.

3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and test

levels shall be as defined in MIL-PRF-19500.

3.6 Marking. Marking shall be in accordance with MIL-PRF-19500. The radiation hardened designator M, D, P, L,

R, F, G, or H shall immediately precede (or replace) the device "2N" identifier (depending upon degree of

abbreviation required).

3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I herein.

3.8 Electrical test requirements. The electrical test requirements shall be as specified in table I.

3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

Qualification inspection (see 4.2).

Screening (see 4.3).

Conformance inspection (see 4.4 and table I, II, and III).