MIL-PRF-19500-538 Semiconductor Device, Transistor, Npn, Silicon, Power, Types 2N6676, 2N6678, 2N6676T1, 2N6678T1, 2N6676T3, 2N6678T3, 2N6691, And 2N6693, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhca, Jankca, Jankcam, Jankcad, Jankcap, Jankcal, Jankcar, Jankcaf, Jankcag, And JankcahThis specification covers the performance requirements for NPN silicon, power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/538G

* 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-VII of MIL-PRF-19500 and herein. Electrical measurements (end-points) shall be in

accordance with table I, subgroup 2 herein.

Subgroup

Method

Condition

2036

Test condition A; weight = 10 pounds; time = 15 s.

2036

Test condition D1; torque = 6 inch-ounce; time =15 s (2N6691, 2N6693

only).

2036

Stud torque (2N6691, 2N6693 only), test condition D2; torque = 15 inch-

pound; time = 15 s.

See 4.3.1, RθJC = 1.0�C for 2N6676, 2N6676T1, 2N6678, 2N6678T1,

3131

2N6691, 2N6693; RθJC = 1.3�C for 2N6676T3, 2N6678T3.

For eutectic die attach: VCB ≥ 100 V dc; adjust PT to achieve TJ =

1026

+175�C minimum; TA = +30�C maximum.

For solder die attach: VCB ≥ 100 V dc.

1037

4.4.4 Group D inspection. Conformance inspection for hardness assured JANS, JANJ, and JANTXV types shall

include the group D tests specified in table II herein. These tests shall be performed as required in accordance with

MIL-PRF-19500 and method 1019 of MIL-STD-750, for total ionizing dose or method 1017 of MIL-STD-750 for

neutron fluence as applicable (see 6.2 herein), except group D, subgroup 2 may be performed separate from other

subgroups.

4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup testing in appendix E, table E-IX of MIL-PRF-19500 and as specified in table III herein. Electrical

measurements (end-points) shall be in accordance with table I, subgroup 2 herein.

4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of

MIL-STD-750.

4.5.2 Insulation resistance test. Insulation resistance test conditions are as follows: Method 1016 of

MIL-STD-750, short collector, emitter and base terminals together. Limit is 10 Ω minimum.