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MIL-PRF-19500-547 Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Types 2N6660 And 2N6661, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a N-channel, enhancement-mode, low-threshold logic level, high frequency, high switching speed MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/547D

TABLE I. Group A inspection.

MIL-STD-750

Inspection 1/

Symbol

Limits

Unit

Method

Conditions

Min

Max

Subgroup 1

2071

Visual and mechanical

Inspection

Subgroup 2

�C/W

Thermal impedance 2/

ZθJC

3161

See 4.3.1

Breakdown voltage, drain to

3407

Bias condition C, VGS = 0 V;

V(BR)DSS

Source

ID = 1.0 �A dc

2N6660

2N6661

Gate to source voltage

3403

VDS > VGS; ID = 1.0 mA dc

VGS(th)1

0.8

2.0

V dc

(threshold)

Gate current

3411

Bias condition C; VDS = 0 V;

IGSSF1

+100

nA dc

VGS = +20 V dc

Gate current

3411

Bias condition C; VDS = 0 V;

IGSSR1

-100

nA dc

VGS = -20 V dc

�A dc

Drain current

3413

VGS = 0; bias condition C;

IDSS1

1.0

VDS = 80 percent of rated VDS (see

1.3)

Static drain to source on-state

3421

VGS = 10 V dc; condition A; pulsed

rDS(on)1

resistance

(see 4.5.1); ID = 1.0 A dc

2N6660

3.0

ohms

2N6661

4.0

ohms

VGS = 5 V dc; condition A; pulsed

Static drain to source on-state

3421

rDS(on)2

resistance

(see 4.5.1); ID = 0.3 A dc

2N6660

5.0

ohms

2N6661

5.3

ohms

Forward voltage (source drain

4011

Pulsed (see 4.5.1); VGS = 0 V

VSD

diode)

0.7

1.6

V(pk)

IS = 0.99 A dc

2N6660

0.7

1.4

V(pk)

IS = 0.86 A dc

2N6661

See footnotes at end of table.