MIL-PRF-19500-547 Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Types 2N6660 And 2N6661, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a N-channel, enhancement-mode, low-threshold logic level, high frequency, high switching speed MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14

MIL-PRF-19500/547D

TABLE II. Group E inspection (all quality levels) for qualification or re-qualification only.

MIL-STD-750

Inspection

Sample

plan

Method

Conditions

Subgroup 1

45 devices

c=0

Temperature cycling

1051

Test condition G, 500 cycles.

Hermetic seal

1071

Fine leak

Gross leak

Electrical measurements

See table I, subgroup 2.

Subgroup 2

45 devices

c=0

Steady-state reverse bias

1042

Condition A, 1,000 hours.

Electrical measurements

See table I, subgroup 2.

Steady-state gate bias

1042

Condition B, 1,000 hours.

Electrical measurements

See table I, subgroup 2.

Subgroup 4

Sample size

N/A

Thermal impedance curves

See MIL-PRF-19500.

Subgroup 10

22 devices

c=0

Commutating diode for safe

3476

Test conditions shall be derived by the

operating area test procedure

manufacturer.

for measuring dv/dt during

reverse recovery of power

MOSFET transistors or

insulated gate bipolar

transistors