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MIL-PRF-19500-547 Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Types 2N6660 And 2N6661, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a N-channel, enhancement-mode, low-threshold logic level, high frequency, high switching speed MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/547D
* 4.3 Screening (JANS, JANTX and JANTXV levels only). Screening shall be in accordance with table E-IV of
MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see table E-IV
Measurement
(1) (2)
JANS level
JANTX and JANTXV levels
(3)
Gate stress test (see 4.3.2)
Gate stress test (see 4.3.2)
(3) 3c
Method 3161 of MIL-STD-750, thermal
Method 3161 of MIL-STD-750, thermal
impedance (see 4.3.2)
impedance (see 4.3.2)
9
Not applicable
Subgroup 2 of table I herein. IDSS1,
IGSSF1, IGSSR1,
10
Method 1042 of MIL-STD-750, test
Method 1042 of MIL-STD-750, test
condition B
condition B
IGSSF1, IGSSR1, IDSS1, rDS(on)1,
IGSSF1, IGSSR1, IDSS1, rDS(on)1,
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VGS(TH)1.
VGS(TH)1.
Subgroup 2 of table I herein.
Subgroup 2 of table I herein.
ĆIGSSF1 = ±20 nA dc or ±100 percent
of initial value, whichever is greater.
ĆIGSSR1 = ±20 nA dc or ±100 percent
of initial value, whichever is greater.
ĆIDSS1 = ±10 µA dc or ±100 percent of
initial value, whichever is greater.
12
Method 1042 of MIL-STD-750, test
Method 1042 of MIL-STD-750, test
condition A.
condition A.
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Subgroups 2 and 3 of table I herein.
Subgroup 2 of table I herein.
ĆIGSSF1 = ±10 nA dc or ±100 percent
ĆIGSSF1 = ±10 nA dc or ±100 percent
of initial value, whichever is greater.
of initial value, whichever is greater.
ĆIGSSR1 = ±10 nA dc or ±100 percent
ĆIGSSR1 = ±10 nA dc or ±100 percent
of initial value, whichever is greater.
of initial value, whichever is greater.
ĆIDSS1 = ±1 µA dc or ±100 percent of
ĆIDSS1 = ±1 µA dc or ±100 percent of
initial value, whichever is greater.
initial value, whichever is greater.
ĆrDS(on)1 =±20 percent of initial value
ĆrDS(on)1 = ±20 percent of initial value
or ±0.5 ohm, whichever is greater.
or ±0.5 ohm, whichever is greater.
ĆVGS(th)1 = ±10 percent of initial value
ĆVGS(th)1 = ±10 percent of initial value
or ±0.3 V dc.
or ±0.3 V dc.
At the end of the test program, IGSSF1, IGSSR1, and IDSS1 are measured.
(1)
An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1 and VGS(th)1 shall be invoked.
(2)
* (3)
Shall be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to
be repeated in screening requirements.
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