MIL-PRF-19500-547 Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Types 2N6660 And 2N6661, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a N-channel, enhancement-mode, low-threshold logic level, high frequency, high switching speed MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/547D

TABLE I. Group A inspection - Continued.

Inspection 1/

Symbol

Limits

Unit

Method

Conditions

Min

Max

Subgroup 4 - Continued.

Ciss

3431

Small signal common source

VDS = 25 V dc; VGS; = 0 V; f = 1

short-circuit input capacitance

MHz

Small signal common source

VDS = 25 V dc; VGS; = 0V; f = 1

Coss

short-circuit output

MHz,

capacitance

Small signal common source

3433

VDS = 25 V dc; VGS; = 0 V; f = 1

Crss

short-circuit reverse transfer

MHz

capacitance

Subgroup 5

Safe operating area

VDS = 80 percent of rated V

High voltage test

DS (see

Electrical measurements

See table I, subgroup 2.

Subgroups 6 and 7

Not applicable

For sampling plan, see MIL-PRF-19500.

This test required for the following end-point measurements only:

Group B, subgroups 2 and 3 (JAN, JANTX, and JANTXV).

Group B, subgroups 3 and 4 (JANS).

Group C, subgroup 2 and 6.

Group E, subgroup 1.