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MIL-PRF-19500-547 Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Types 2N6660 And 2N6661, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a N-channel, enhancement-mode, low-threshold logic level, high frequency, high switching speed MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/547D
TABLE I. Group A inspection - Continued.
Inspection 1/
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 2 ­ Continued.
Pulsed (see 4.5.1), VDS = VGS = 7.5
3475
gFS
170
ms
Forward transconductance
V dc
2N6660
ID1 = 525 m A dc
2N6661
ID2 = 475 m A dc
Subgroup 3
TC = +125°C
High temperature operation
± 500
Gate current
3411
Bias condition C, VDS = 0 V;
IGSS2
nA dc
VGS = +20 V dc or -20 V dc
µA dc
Drain current
3413
Bias condition C, VGS = 0 V,
IDSS2
100
VDS = -80 percent of rated VDS (see
Static drain to source on-state
3421
VGS = 10 V dc; condition A; pulsed
rDS(on)3
ohms
resistance
(see 4.5.1); ID = 1.0 A dc
2N6660
5.6
2N6661
7.5
Gate to source
3403
VDS > VGS, ID = 1.0 mA dc
VGS(th)2
0.3
V dc
voltage(threshold)
TC = -55°C
Low temperature operation:
Gate to source voltage
3403
VDS > VGS; ID = 1.0 mA
VGS(th)3
2.5
V dc
(threshold)
Subgroup 4
RGS = 23 Ω, RL = 23 Ω , VGEN = 10 V
3472
Switching time test
VDD = 25 V dc; ID ≅ 1 A dc,
Turn-on delay time
td(on)
10
ns
VDD = 25 V dc; ID ≅ 1 A dc
Turn-off delay time
td(off)
10
ns
See footnotes at end of table.
11



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