MIL-PRF-19500-547 Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Types 2N6660 And 2N6661, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a N-channel, enhancement-mode, low-threshold logic level, high frequency, high switching speed MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/547D

* 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in

accordance with table I, subgroup 2 herein.

Subgroup

Method

Condition

2036

Test condition E .

Thermal resistance, see 4.5.2, RθJC(max) = 20�C/W.

3161

1042

Intermittent operation life, condition D, 6,000 cycles . No heat sink or forced air

cooling on the device shall be permitted during the on cycle;

ton = 30 seconds minimum.

4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table II herein. Electrical measurements (end-

points) shall be in accordance with table I, subgroup 2 herein.

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.

4.5.2 Thermal resistance. The thermal resistance measurements shall be performed in accordance with method

3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW (and VH where appropriate).

Measurement delay time (tMD) = 70 �s max. See table E-IX of MIL-PRF-19500, group E, subgroup 4.